STMicroelectronics STWA60N0 N channel-Channel Power MOSFET, 62 A, 600 V N, 3-Pin TO-247 STWA60N035M9
- RS 제품 번호:
- 762-554
- 제조사 부품 번호:
- STWA60N035M9
- 제조업체:
- STMicroelectronics
N
대량 구매 할인 기용 가능
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₩8,480.68
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- 2026년 7월 27일 부터 배송
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- RS 제품 번호:
- 762-554
- 제조사 부품 번호:
- STWA60N035M9
- 제조업체:
- STMicroelectronics
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 62A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | STWA60N0 | |
| Package Type | TO-247 | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 112nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Power Dissipation Pd | 321W | |
| Maximum Operating Temperature | 150°C | |
| Length | 21.1mm | |
| Height | 5.1mm | |
| Standards/Approvals | RoHS Compliant | |
| Width | 15.9 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 62A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series STWA60N0 | ||
Package Type TO-247 | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 112nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Power Dissipation Pd 321W | ||
Maximum Operating Temperature 150°C | ||
Length 21.1mm | ||
Height 5.1mm | ||
Standards/Approvals RoHS Compliant | ||
Width 15.9 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N Channel Super Junction Power MOSFET is a high efficiency power device built on Advanced MDmesh M9 super junction technology. It is designed for medium to high voltage applications where low conduction losses and fast switching are critical.
Very low FOM
Higher dv/dt capability
Excellent switching performance
100% avalanche tested
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