STMicroelectronics ST Type N-Channel MOSFET, 68 A, 650 V Depletion, 3-Pin TO-247
- RS 제품 번호:
- 202-5554
- 제조사 부품 번호:
- STWA70N65DM6
- 제조업체:
- STMicroelectronics
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대량 구매 할인 기용 가능
Subtotal (1 tube of 30 units)*
₩496,771.20
일시적 품절
- 2026년 6월 10일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 30 - 120 | ₩16,559.04 | ₩496,788.12 |
| 150 + | ₩16,228.16 | ₩486,844.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 202-5554
- 제조사 부품 번호:
- STWA70N65DM6
- 제조업체:
- STMicroelectronics
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 68A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | ST | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.036Ω | |
| Channel Mode | Depletion | |
| Typical Gate Charge Qg @ Vgs | 125nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 450W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Height | 41.2mm | |
| Standards/Approvals | No | |
| Width | 5.1 mm | |
| Length | 15.9mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 68A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series ST | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.036Ω | ||
Channel Mode Depletion | ||
Typical Gate Charge Qg @ Vgs 125nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 450W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Height 41.2mm | ||
Standards/Approvals No | ||
Width 5.1 mm | ||
Length 15.9mm | ||
Automotive Standard No | ||
The STMicroelectronics N-channel Power MOSFET is part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market.
100% avalanche tested
Zener-protected
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