Vishay TrenchFET Type N-Channel MOSFET, 60 A, 30 V Enhancement, 8-Pin PowerPAK SO-8 SiRA10BDP-T1-GE3
- RS 제품 번호:
- 735-112
- 제조사 부품 번호:
- SiRA10BDP-T1-GE3
- 제조업체:
- Vishay
N
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Subtotal (1 tape of 1 unit)*
₩2,115.75
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- 2026년 7월 20일 부터 배송
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Tape(s) | Per Tape |
|---|---|
| 1 - 24 | ₩2,115.75 |
| 25 - 99 | ₩1,396.20 |
| 100 - 499 | ₩719.55 |
| 500 - 999 | ₩698.10 |
| 1000 + | ₩676.65 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 735-112
- 제조사 부품 번호:
- SiRA10BDP-T1-GE3
- 제조업체:
- Vishay
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET | |
| Package Type | PowerPAK SO-8 | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.005Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 24.1nC | |
| Maximum Power Dissipation Pd | 43W | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.3mm | |
| Length | 6.25mm | |
| Standards/Approvals | RoHS Compliant | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET | ||
Package Type PowerPAK SO-8 | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.005Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 24.1nC | ||
Maximum Power Dissipation Pd 43W | ||
Maximum Operating Temperature 150°C | ||
Width 5.3mm | ||
Length 6.25mm | ||
Standards/Approvals RoHS Compliant | ||
Height 1.1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
The Vishay N channel MOSFET is designed for efficient and reliable power switching in high-performance power electronics. it is fully Rg and UIS tested to ensure robustness under electrical stress and demanding operating conditions. optimized for low losses and fast switching, it supports Compact high power density designs while meeting RoHS compliant and halogen free requirements.
Offers 100 percent Rg and UIS testing for proven device reliability
Supports high power density dc/dc converter applications
Enables efficient synchronous rectification performance
Complies with RoHS standards and halogen free requirements
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