제조사부품번호

STMicroelectronics G-HEMT P-Channel Transistor, 11.5 A, 700 V Enhancement, 8-Pin PowerFLAT SGT190R70ILB

RS 제품 번호:: 719-635
제조사 부품 번호:: SGT190R70ILB
제조업체:: STMicroelectronics

STMicroelectronics G-HEMT P-Channel Transistor, 11.5 A, 700 V Enhancement, 8-Pin PowerFLAT SGT190R70ILB

대량 구매 할인 기용 가능

Subtotal (1 unit)*

₩2,985.44

일시적 품절

2026년 4월 09일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당
1 - 9	₩2,985.44
10 - 24	₩2,628.24
25 - 99	₩2,353.76
100 - 499	₩1,913.84
500 +	₩1,870.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 719-635
제조사 부품 번호:: SGT190R70ILB
제조업체:: STMicroelectronics

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Channel Type	P-Channel
	Product Type	Transistor
	Maximum Continuous Drain Current Id	11.5A
	Maximum Drain Source Voltage Vds	700V
	Package Type	PowerFLAT
	Series	G-HEMT
	Mount Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance Rds	190mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	2.8nC
	Maximum Power Dissipation Pd	83W
	Maximum Gate Source Voltage Vgs	-6 to 7 V
	Maximum Operating Temperature	150°C
	Width	8.1 mm
	Length	8.1mm
	Height	0.9mm

	모두 선택
	브랜드 STMicroelectronics
	Channel Type P-Channel
	Product Type Transistor
	Maximum Continuous Drain Current Id 11.5A
	Maximum Drain Source Voltage Vds 700V
	Package Type PowerFLAT
	Series G-HEMT
	Mount Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance Rds 190mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 2.8nC
	Maximum Power Dissipation Pd 83W
	Maximum Gate Source Voltage Vgs -6 to 7 V
	Maximum Operating Temperature 150°C
	Width 8.1 mm
	Length 8.1mm
	Height 0.9mm

Datasheet - SGT190R70ILB

COO (Country of Origin):: CN

The STMicroelectronics 700 V 11.5 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.

Enhancement mode normally off transistor

Very high switching speed

High power management capability

Extremely low capacitances

Kelvin source pad for optimum gate driving

Zero reverse recovery charge

ESD safeguard

STMicroelectronics G-HEMT P-Channel Transistor, 11.5 A, 700 V Enhancement, 8-Pin PowerFLAT SGT190R70ILB

관련된 링크들