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STMicroelectronics G-HEMT P-Channel Transistor, 29 A, 700 V Enhancement, 8-Pin PowerFLAT SGT080R70ILB

RS 제품 번호:: 719-632
제조사 부품 번호:: SGT080R70ILB
제조업체:: STMicroelectronics

STMicroelectronics G-HEMT P-Channel Transistor, 29 A, 700 V Enhancement, 8-Pin PowerFLAT SGT080R70ILB

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Subtotal (1 unit)*

₩6,053.60

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2026년 4월 09일 부터 배송

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1 - 9	₩6,053.60
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* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 719-632
제조사 부품 번호:: SGT080R70ILB
제조업체:: STMicroelectronics

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모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Product Type	Transistor
	Channel Type	P-Channel
	Maximum Continuous Drain Current Id	29A
	Maximum Drain Source Voltage Vds	700V
	Package Type	PowerFLAT
	Series	G-HEMT
	Mount Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance Rds	80mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	188W
	Maximum Gate Source Voltage Vgs	-6 to 7 V
	Typical Gate Charge Qg @ Vgs	6.2nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Height	0.9mm
	Width	8.1 mm
	Length	8.1mm

	모두 선택
	브랜드 STMicroelectronics
	Product Type Transistor
	Channel Type P-Channel
	Maximum Continuous Drain Current Id 29A
	Maximum Drain Source Voltage Vds 700V
	Package Type PowerFLAT
	Series G-HEMT
	Mount Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance Rds 80mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 188W
	Maximum Gate Source Voltage Vgs -6 to 7 V
	Typical Gate Charge Qg @ Vgs 6.2nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Height 0.9mm
	Width 8.1 mm
	Length 8.1mm

Datasheet - SGT080R70ILB

COO (Country of Origin):: CN

The STMicroelectronics 700 V 29 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.

Enhancement mode normally off transistor

Very high switching speed

High power management capability

Extremely low capacitances

Kelvin source pad for optimum gate driving

Zero reverse recovery charge

ESD safeguard

STMicroelectronics G-HEMT P-Channel Transistor, 29 A, 700 V Enhancement, 8-Pin PowerFLAT SGT080R70ILB

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