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STMicroelectronics G-HEMT P-Channel Transistor, 26 A, 700 V Enhancement, 13-Pin TO-LL SGT070R70HTO

RS 제품 번호:: 719-630
제조사 부품 번호:: SGT070R70HTO
제조업체:: STMicroelectronics

STMicroelectronics G-HEMT P-Channel Transistor, 26 A, 700 V Enhancement, 13-Pin TO-LL SGT070R70HTO

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Subtotal (1 unit)*

₩9,922.64

재고있음

300 개 단위 배송 준비 완료

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수량	한팩당
1 - 9	₩9,922.64
10 - 49	₩8,723.20
50 - 99	₩7,841.48
100 +	₩6,202.12

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 719-630
제조사 부품 번호:: SGT070R70HTO
제조업체:: STMicroelectronics

참조 문서

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Channel Type	P-Channel
	Product Type	Transistor
	Maximum Continuous Drain Current Id	26A
	Maximum Drain Source Voltage Vds	700V
	Package Type	TO-LL
	Series	G-HEMT
	Mount Type	Surface Mount
	Pin Count	13
	Maximum Drain Source Resistance Rds	70mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	8.5nC
	Maximum Power Dissipation Pd	231W
	Maximum Gate Source Voltage Vgs	-6 to 7 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Height	2.4mm
	Width	10.4 mm
	Length	10.58mm

	모두 선택
	브랜드 STMicroelectronics
	Channel Type P-Channel
	Product Type Transistor
	Maximum Continuous Drain Current Id 26A
	Maximum Drain Source Voltage Vds 700V
	Package Type TO-LL
	Series G-HEMT
	Mount Type Surface Mount
	Pin Count 13
	Maximum Drain Source Resistance Rds 70mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 8.5nC
	Maximum Power Dissipation Pd 231W
	Maximum Gate Source Voltage Vgs -6 to 7 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Height 2.4mm
	Width 10.4 mm
	Length 10.58mm

Datasheet - SGT070R70HTO

COO (Country of Origin):: CN

The STMicroelectronics 700 V 26 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.

Enhancement mode normally off transistor

Very high switching speed

High power management capability

Extremely low capacitances

Kelvin source pad for optimum gate driving

Zero reverse recovery charge

ESD safeguard

STMicroelectronics G-HEMT P-Channel Transistor, 26 A, 700 V Enhancement, 13-Pin TO-LL SGT070R70HTO

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