STMicroelectronics Sct N channel-Channel Power MOSFET, 56 A, 1200 V Enhancement, 4-Pin Hip-247-4 SCT025W120G3-4
- RS 제품 번호:
- 719-470
- 제조사 부품 번호:
- SCT025W120G3-4
- 제조업체:
- STMicroelectronics
N
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩31,512.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 |
|---|---|
| 1 - 4 | ₩31,512.00 |
| 5 + | ₩30,576.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 719-470
- 제조사 부품 번호:
- SCT025W120G3-4
- 제조업체:
- STMicroelectronics
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 56A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | Sct | |
| Package Type | Hip-247-4 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 27mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 388W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 2.7V | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 25.27mm | |
| Length | 15.9mm | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 56A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series Sct | ||
Package Type Hip-247-4 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 27mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 388W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 2.7V | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Maximum Operating Temperature 175°C | ||
Height 25.27mm | ||
Length 15.9mm | ||
- COO (Country of Origin):
- CN
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Very high operating junction temperature capability (TJ equal to 200 °C)
Source sensing pin for increased efficiency
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