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STMicroelectronics SCT019 N channel-Channel Power MOSFET, 90 A, 1200 V Enhancement, 4-Pin Hip-247-4 SCT019W120G3-4AG

RS 제품 번호:: 719-469
제조사 부품 번호:: SCT019W120G3-4AG
제조업체:: STMicroelectronics

STMicroelectronics SCT019 N channel-Channel Power MOSFET, 90 A, 1200 V Enhancement, 4-Pin Hip-247-4 SCT019W120G3-4AG

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Subtotal (1 unit)*

₩28,801.60

일시적 품절

2026년 3월 09일 부터 배송

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RS 제품 번호:: 719-469
제조사 부품 번호:: SCT019W120G3-4AG
제조업체:: STMicroelectronics

참조 문서

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모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Product Type	Power MOSFET
	Channel Type	N channel
	Maximum Continuous Drain Current Id	90A
	Maximum Drain Source Voltage Vds	1200V
	Series	SCT019
	Package Type	Hip-247-4
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	19.2mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	-10 to 22 V
	Typical Gate Charge Qg @ Vgs	120nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	2.8V
	Maximum Power Dissipation Pd	486W
	Maximum Operating Temperature	200°C
	Length	21.1mm
	Width	15.9 mm
	Height	5.1mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 STMicroelectronics
	Product Type Power MOSFET
	Channel Type N channel
	Maximum Continuous Drain Current Id 90A
	Maximum Drain Source Voltage Vds 1200V
	Series SCT019
	Package Type Hip-247-4
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 19.2mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs -10 to 22 V
	Typical Gate Charge Qg @ Vgs 120nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 2.8V
	Maximum Power Dissipation Pd 486W
	Maximum Operating Temperature 200°C
	Length 21.1mm
	Width 15.9 mm
	Height 5.1mm
	Automotive Standard AEC-Q101

Datasheet - SCT019W120G3-4AG

COO (Country of Origin):: CN

The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

AEC-Q101 qualified

Very low RDS(on) over the entire temperature range

High speed switching performances

Very fast and robust intrinsic body diode

Source sensing pin for increased efficiency

STMicroelectronics SCT019 N channel-Channel Power MOSFET, 90 A, 1200 V Enhancement, 4-Pin Hip-247-4 SCT019W120G3-4AG

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