STMicroelectronics SCT019 N channel-Channel Power MOSFET, 90 A, 1200 V Enhancement, 4-Pin Hip-247-4 SCT019W120G3-4AG

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RS 제품 번호:
719-469
제조사 부품 번호:
SCT019W120G3-4AG
제조업체:
STMicroelectronics
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브랜드

STMicroelectronics

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

90A

Maximum Drain Source Voltage Vds

1200V

Package Type

Hip-247-4

Series

SCT019

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

19.2mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

120nC

Maximum Gate Source Voltage Vgs

-10 to 22 V

Maximum Power Dissipation Pd

486W

Forward Voltage Vf

2.8V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

200°C

Width

15.9 mm

Length

21.1mm

Height

5.1mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

AEC-Q101 qualified

Very low RDS(on) over the entire temperature range

High speed switching performances

Very fast and robust intrinsic body diode

Source sensing pin for increased efficiency

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