제조사부품번호

STMicroelectronics SCT0 MOSFET, 30 A, 1200 V, 3-Pin Hip-247 SCT070W120G3AG

RS 제품 번호:: 330-234
제조사 부품 번호:: SCT070W120G3AG
제조업체:: STMicroelectronics

STMicroelectronics SCT0 MOSFET, 30 A, 1200 V, 3-Pin Hip-247 SCT070W120G3AG

대량 구매 할인 기용 가능

Subtotal (1 unit)*

₩29,226.48

재고있음

60 개 단위 배송 준비 완료

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수량	한팩당
1 - 9	₩29,226.48
10 - 99	₩26,312.48
100 +	₩24,250.12

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 330-234
제조사 부품 번호:: SCT070W120G3AG
제조업체:: STMicroelectronics

참조 문서

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	Hip-247
	Series	SCT0
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	63mΩ
	Maximum Gate Source Voltage Vgs	18 V
	Maximum Power Dissipation Pd	236W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	41nC
	Forward Voltage Vf	3V
	Maximum Operating Temperature	200°C
	Standards/Approvals	AEC-Q101
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 STMicroelectronics
	Product Type MOSFET
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 1200V
	Package Type Hip-247
	Series SCT0
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 63mΩ
	Maximum Gate Source Voltage Vgs 18 V
	Maximum Power Dissipation Pd 236W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 41nC
	Forward Voltage Vf 3V
	Maximum Operating Temperature 200°C
	Standards/Approvals AEC-Q101
	Automotive Standard AEC-Q101

Datasheet - SCT070W120G3AG

COO (Country of Origin):: CN

The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

AEC-Q101 qualified

Very low RDS(on) over the entire temperature range

High speed switching performances

Very fast and robust intrinsic body diode

Very high operating junction temperature capability TJ equal to 200 °C

STMicroelectronics SCT0 MOSFET, 30 A, 1200 V, 3-Pin Hip-247 SCT070W120G3AG

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