ROHM RQ3P120BKFRA Type N-Channel Single MOSFETs, 100 V Enhancement, 8-Pin HSMT-8AG RQ3P120BKFRATCB
- RS 제품 번호:
- 687-380
- 제조사 부품 번호:
- RQ3P120BKFRATCB
- 제조업체:
- ROHM
N
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대량 구매 할인 기용 가능
Subtotal (1 tape of 2 units)*
₩2,248.48
일시적 품절
- 2026년 1월 20일 부터 배송
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수량 | 한팩당 | Per Tape* |
|---|---|---|
| 2 - 18 | ₩1,124.24 | ₩2,248.48 |
| 20 - 48 | ₩988.88 | ₩1,975.88 |
| 50 - 198 | ₩893.00 | ₩1,786.00 |
| 200 - 998 | ₩714.40 | ₩1,428.80 |
| 1000 + | ₩703.12 | ₩1,408.12 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 687-380
- 제조사 부품 번호:
- RQ3P120BKFRATCB
- 제조업체:
- ROHM
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | ROHM | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | HSMT-8AG | |
| Series | RQ3P120BKFRA | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 58mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 6.9nC | |
| Maximum Power Dissipation Pd | 40W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.30mm | |
| Height | 0.9mm | |
| Standards/Approvals | RoHS | |
| Width | 300 mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 ROHM | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type HSMT-8AG | ||
Series RQ3P120BKFRA | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 58mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 6.9nC | ||
Maximum Power Dissipation Pd 40W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Length 3.30mm | ||
Height 0.9mm | ||
Standards/Approvals RoHS | ||
Width 300 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- JP
The ROHM N channel power MOSFET designed for efficient energy management in various applications. Capable of withstanding drain-source voltages of up to 100V and continuous current ratings of ±12A, this MOSFET excels in both power density and thermal resistance. The compact HSMT8AG package significantly reduces PCB space requirements by 64%, making it an ideal choice for modern electronic designs that demand reliability and efficiency. With AEC-Q101 qualification, it ensures robust operation in automotive applications, serving a wide range of use cases from ADAS to lighting solutions.
Small high-powered package optimises space on PCBs by 64%
High mounting reliability achieved through innovative terminal and plating treatments
AEC Q101 qualification ensures reliability in automotive applications
Designed to handle a maximum power dissipation of 40W for effective thermal management
Low on-state resistance of 58mΩ enhances efficiency and performance
Robust gate-source voltage tolerance of ±20V expands integration possibilities
Avalanche rating of 8A and energy dissipation of 5.2mJ provides extra protection during operation
Highly reliable operation across a temperature range of -55 to +150°C
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