ROHM R8019KNZ4 N-Channel Single MOSFETs, 19 A, 800 V Enhancement, 3-Pin TO-247 R8019KNZ4C13
- RS 제품 번호:
- 687-367
- 제조사 부품 번호:
- R8019KNZ4C13
- 제조업체:
- ROHM
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View bulk pricing optionsSubtotal (1 Bag of 2 units)*
₩21,980.00
재고있음
- 120 개 단위 배송 준비 완료
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수량 | 한팩당 | Per Bag* |
|---|---|---|
| 2 - 18 | ₩10,990.00 | ₩21,980.00 |
| 20 - 98 | ₩9,680.00 | ₩19,360.00 |
| 100 - 198 | ₩8,680.00 | ₩17,360.00 |
| 200 + | ₩8,430.00 | ₩16,860.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 687-367
- 제조사 부품 번호:
- R8019KNZ4C13
- 제조업체:
- ROHM
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | ROHM | |
| Channel Type | N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | R8019KNZ4 | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.265Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 208W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 16.24mm | |
| Length | 40mm | |
| Height | 5.22mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 ROHM | ||
Channel Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series R8019KNZ4 | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.265Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 208W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 16.24mm | ||
Length 40mm | ||
Height 5.22mm | ||
Automotive Standard No | ||
The ROHM N channel MOSFET designed for high-efficiency performance in electronic applications. Featuring a maximum Drain-Source voltage of 800V and a continuous drain current capability of 19A, this device effectively manages significant power loads while maintaining low on-resistance. Engineered with advanced switching capabilities, it provides rapid response times essential for efficient circuit operation. The encapsulation in a TO-247G package ensures straightforward mounting and excellent thermal performance, making it ideal for power management in everything from industrial systems to consumer electronics.
Low on resistance of just 0.265Ω, enhancing energy efficiency
Rated for continuous drain current of ±19A, allowing substantial power handling
Fast switching performance optimises the operation of dynamic circuits
Pb free lead plating ensures compliance with environmental standards
Robust avalanche ratings support reliable operation in transient conditions
Ideal for parallel usage, simplifying multiple device configurations.
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