ROHM R8019KNZ4 Type N-Channel Single MOSFETs, 800 V Enhancement, 3-Pin TO-247 R8019KNZ4C13

N

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₩20,055.84

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  • 2026년 1월 26일 부터 배송
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2 - 18₩10,027.92₩20,053.96
20 - 98₩8,828.48₩17,658.84
100 - 198₩7,926.08₩15,850.28
200 +₩6,234.08₩12,466.28

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
687-367
제조사 부품 번호:
R8019KNZ4C13
제조업체:
ROHM
제품 정보를 선택해 유사 제품을 찾기
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브랜드

ROHM

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Drain Source Voltage Vds

800V

Series

R8019KNZ4

Package Type

TO-247

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.265Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

208W

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

65nC

Maximum Operating Temperature

150°C

Width

16.24 mm

Length

40mm

Height

5.22mm

Standards/Approvals

RoHS

Automotive Standard

No

The ROHM N channel MOSFET designed for high-efficiency performance in electronic applications. Featuring a maximum Drain-Source voltage of 800V and a continuous drain current capability of 19A, this device effectively manages significant power loads while maintaining low on-resistance. Engineered with advanced switching capabilities, it provides rapid response times essential for efficient circuit operation. The encapsulation in a TO-247G package ensures straightforward mounting and excellent thermal performance, making it ideal for power management in everything from industrial systems to consumer electronics.

Low on resistance of just 0.265Ω, enhancing energy efficiency

Rated for continuous drain current of ±19A, allowing substantial power handling

Fast switching performance optimises the operation of dynamic circuits

Pb free lead plating ensures compliance with environmental standards

Robust avalanche ratings support reliable operation in transient conditions

Ideal for parallel usage, simplifying multiple device configurations.

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