Vishay SIRS4300DP Type N-Channel Single MOSFETs, 680 A, 30 V Enhancement, 8-Pin PowerPAK

RS 제품 번호:: 653-096
제조사 부품 번호:: SIRS4300DP-T1-RE3
제조업체:: Vishay

Vishay SIRS4300DP Type N-Channel Single MOSFETs, 680 A, 30 V Enhancement, 8-Pin PowerPAK

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1 tape of 1 unit)*

₩5,382.00

5,984 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

Tape(s)	Per Tape
1 - 9	₩5,382.00
10 - 24	₩5,206.50
25 - 99	₩5,128.50
100 - 499	₩4,348.50
500 +	₩4,075.50

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 653-096
제조사 부품 번호:: SIRS4300DP-T1-RE3
제조업체:: Vishay

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	Type N
	Product Type	Single MOSFETs
	Maximum Continuous Drain Current Id	680A
	Maximum Drain Source Voltage Vds	30V
	Package Type	PowerPAK
	Series	SIRS4300DP
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.00040Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	84nC
	Maximum Power Dissipation Pd	278W
	Forward Voltage Vf	1.1V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	6.10mm
	Width	5.10mm
	Standards/Approvals	RoHS
	Height	0.95mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Channel Type Type N
	Product Type Single MOSFETs
	Maximum Continuous Drain Current Id 680A
	Maximum Drain Source Voltage Vds 30V
	Package Type PowerPAK
	Series SIRS4300DP
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.00040Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 84nC
	Maximum Power Dissipation Pd 278W
	Forward Voltage Vf 1.1V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 6.10mm
	Width 5.10mm
	Standards/Approvals RoHS
	Height 0.95mm
	Automotive Standard No

Datasheet - SIRS4300DP-T1-RE3

COO (Country of Origin):: CN

Vishay SIRS4300DP Series Single MOSFETs, 30V Maximum Drain Source Voltage, 680A Maximum Continuous Drain Current - SIRS4300DP-T1-RE3

This single MOSFETs device is an N-channel enhancement semiconductor intended for high-current switching and power-conversion roles in industrial electronics. It is supplied in an 8-pin surface-mount PowerPAK package and is suited to demanding thermal and electrical environments where compact, low-loss switching is required.

Features and Benefits:

• 30V drain rating enables low-voltage power-stage designs • 680A continuous drain current supports heavy load switching • 0.00040Ω Rds(on) reduces conduction losses for efficiency • 84nC typical gate charge allows Faster gate transitions • 278W power dissipation manages high energy throughput • Operates to 150°C for elevated temperature applications

Applications

• Suitable for high-current DC-DC converters in automation systems • Ideal for power stages in motor drive controllers • Used for synchronous rectification in power-supply modules • Can be used for load switching in industrial power distribution • Used with parallel arrays for data-centre power racks

What gate-drive margin is acceptable for reliable switching?

The device tolerates gate voltages up to 20V

design gate drivers to operate within this limit and to achieve the typical 84nC charge for intended switching speeds.

How should thermal management be approached on a PCB?

Given the 278W dissipation capability, use large copper areas, thermal vias and direct heatsinking to the PowerPAK exposed pad to keep junction temperatures within limits.

Can it be paralleled to increase current capacity?

Paralleling is feasible provided matching Rds(on) and proper current-sharing measures are implemented, along with careful gate-drive timing to avoid imbalance.

What environmental temperature range can it tolerate during service?

The component is specified for operation down to -55°C and up to 150°C for junction or case conditions as defined in system thermal design.

What package considerations affect layout density?

The 8-pin PowerPAK surface-mount format permits Compact placement but requires attention to copper heatsinking and trace width for high-current paths.