Vishay SQJA36EP N-Channel MOSFET, 350 A, 40 V Enhancement, 4-Pin PowerPAK SQJA36EP-T1_JE3
- RS 제품 번호:
- 653-068
- 제조사 부품 번호:
- SQJA36EP-T1_JE3
- 제조업체:
- Vishay
Subtotal (1 reel of 3000 units)*
₩6,006,000.00
마지막 RS 재고
- 최종적인 3,000 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 + | ₩2,002.00 | ₩6,007,800.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
대체품
이 제품은 현재 공급 불가입니다. 아래 제품들은 당사에서 추천드리는 대체품입니다.
1 개가 들어있는 1테이프
₩2,760.00
- RS 제품 번호:
- 653-068
- 제조사 부품 번호:
- SQJA36EP-T1_JE3
- 제조업체:
- Vishay
사양
참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 350A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAK | |
| Series | SQJA36EP | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.00124Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 86nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 500W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Width | 6.25mm | |
| Height | 1.1mm | |
| Length | 6.25mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 350A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAK | ||
Series SQJA36EP | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.00124Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 86nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 500W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Width 6.25mm | ||
Height 1.1mm | ||
Length 6.25mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The Vishay automotive-grade N-channel MOSFET built for high-efficiency switching in power-dense environments. It supports up to 40 V drain-source voltage and handles continuous drain currents up to 350 A, making it Ideal for demanding automotive applications. Packaged in PowerPAK SO-8L, it features TrenchFET Gen IV technology for ultra-low RDS(on) and optimized switching performance.
AEC Q101 qualified
Pb Free
Halogen free
RoHS compliant
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