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Microchip DN2470 Type N-Channel RF MOSFET, 170 mA, 700 V Depletion, 3-Pin TO-252 DN2470K4-G

RS 제품 번호:: 598-941
제조사 부품 번호:: DN2470K4-G
제조업체:: Microchip

Microchip DN2470 Type N-Channel RF MOSFET, 170 mA, 700 V Depletion, 3-Pin TO-252 DN2470K4-G

Subtotal (1 reel of 2000 units)*

₩3,162,160.00

일시적 품절

2026년 4월 14일 부터 배송

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RS 제품 번호:: 598-941
제조사 부품 번호:: DN2470K4-G
제조업체:: Microchip

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Microchip
	Channel Type	Type N
	Product Type	RF MOSFET
	Maximum Continuous Drain Current Id	170mA
	Maximum Drain Source Voltage Vds	700V
	Package Type	TO-252
	Series	DN2470
	Mount Type	Surface
	Pin Count	3
	Channel Mode	Depletion
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	0.245in
	Width	0.265 in
	Standards/Approvals	RoHS-compliant
	Height	0.94in
	Automotive Standard	No

	모두 선택
	브랜드 Microchip
	Channel Type Type N
	Product Type RF MOSFET
	Maximum Continuous Drain Current Id 170mA
	Maximum Drain Source Voltage Vds 700V
	Package Type TO-252
	Series DN2470
	Mount Type Surface
	Pin Count 3
	Channel Mode Depletion
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 0.245in
	Width 0.265 in
	Standards/Approvals RoHS-compliant
	Height 0.94in
	Automotive Standard No

Datasheet - DN2470K4-G

COO (Country of Origin):: CN

The Microchip Low threshold depletion-mode transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FET is ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

High input impedance

Low input capacitance

Fast switching speeds

Low on resistance

Free from secondary breakdown

Low input and output leakage

Microchip DN2470 Type N-Channel RF MOSFET, 170 mA, 700 V Depletion, 3-Pin TO-252 DN2470K4-G

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