Microchip N-Channel DMOS FET-Channel Single MOSFETs, 350 mA, 9 V Depletion Mode, 5-Pin SOT-23-5 LND01K1-G
- RS 제품 번호:
- 598-897
- 제조사 부품 번호:
- LND01K1-G
- 제조업체:
- Microchip
N
Subtotal (1 reel of 3000 units)*
₩2,532,360.00
일시적 품절
- 2026년 2월 09일 부터 배송
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수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 + | ₩844.12 | ₩2,534,052.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 598-897
- 제조사 부품 번호:
- LND01K1-G
- 제조업체:
- Microchip
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Microchip | |
| Channel Type | N-Channel DMOS FET | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 350mA | |
| Maximum Drain Source Voltage Vds | 9V | |
| Package Type | SOT-23-5 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Depletion Mode | |
| Minimum Operating Temperature | -25°C | |
| Forward Voltage Vf | 1.8V | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Power Dissipation Pd | 360mW | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | ISO/TS‑16949, RoHS | |
| Height | 1.3mm | |
| Length | 3.05mm | |
| Width | 1.75 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Microchip | ||
Channel Type N-Channel DMOS FET | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 350mA | ||
Maximum Drain Source Voltage Vds 9V | ||
Package Type SOT-23-5 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Depletion Mode | ||
Minimum Operating Temperature -25°C | ||
Forward Voltage Vf 1.8V | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Power Dissipation Pd 360mW | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals ISO/TS‑16949, RoHS | ||
Height 1.3mm | ||
Length 3.05mm | ||
Width 1.75 mm | ||
Automotive Standard No | ||
The Microchip Depletion-Mode MOSFET is a low threshold, depletion-mode (normally-on) transistor utilizing an advanced lateral DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Low on resistance
Low input capacitance
Fast switching speeds
High input impedance and high gain
Low power drive requirement
Ease of paralleling
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