STMicroelectronics SCT N-Channel MOSFET, 30 A, 650 V Enhancement, 4-Pin Hip-247-4 SCT040W65G3-4
- RS 제품 번호:
- 366-221
- 제조사 부품 번호:
- SCT040W65G3-4
- 제조업체:
- STMicroelectronics
대량 구매 할인 받기
10개 더 담고 ₩26,600.00 할인 받기
View bulk pricing optionsSubtotal (1 unit)*
₩26,560.00
재고있음
- 추가로 2026년 11월 16일 부터 26 개 단위 배송
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수량 | 한팩당 | 절감 |
|---|---|---|
| 1 - 9 | ₩26,560.00 | - |
| 10 - 99 | ₩23,900.00 | ₩26,600.00 |
| 100 + | ₩22,040.00 | ₩452,000.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 366-221
- 제조사 부품 번호:
- SCT040W65G3-4
- 제조업체:
- STMicroelectronics
사양
참조 문서
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Operating Frequency | 1MHz | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 30A | |
| Output Power | 240W | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | Hip-247-4 | |
| Series | SCT | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | RoHS | |
| Length | 20.1mm | |
| Height | 5.1mm | |
| Width | 15.9mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Operating Frequency 1MHz | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Output Power 240W | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type Hip-247-4 | ||
Series SCT | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals RoHS | ||
Length 20.1mm | ||
Height 5.1mm | ||
Width 15.9mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Very high operating junction temperature capability
Source sensing pin for increased efficiency
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