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Infineon IGT65 Type N-Channel MOSFET, 38 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IGT65R045D2ATMA1

RS 제품 번호:: 351-968
제조사 부품 번호:: IGT65R045D2ATMA1
제조업체:: Infineon

Infineon IGT65 Type N-Channel MOSFET, 38 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IGT65R045D2ATMA1

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Subtotal (1 unit)*

₩16,258.24

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2026년 5월 14일 부터 배송

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* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 351-968
제조사 부품 번호:: IGT65R045D2ATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	38A
	Maximum Drain Source Voltage Vds	650V
	Series	IGT65
	Package Type	PG-HSOF-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.054Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	10 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	6nC
	Maximum Power Dissipation Pd	131W
	Maximum Operating Temperature	150°C
	Standards/Approvals	JEDEC
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 38A
	Maximum Drain Source Voltage Vds 650V
	Series IGT65
	Package Type PG-HSOF-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.054Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 10 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 6nC
	Maximum Power Dissipation Pd 131W
	Maximum Operating Temperature 150°C
	Standards/Approvals JEDEC
	Automotive Standard No

Datasheet - IGT65R045D2ATMA1

COO (Country of Origin):: MY

The Infineon CoolGaN is a highly efficient gallium nitride (GaN) transistor designed for power conversion. It enables higher power density, supports reduced system BOM cost, and facilitates miniaturized form factors. Produced using wafer technology and fully automated production lines, it features narrow production tolerances and the highest product quality. This makes it suitable for a wide range of applications, from consumer electronics to industrial applications.

Enhancement mode transistor

Ultra fast switching

No reverse recovery charge

Capable of reverse conduction

Low gate and output charge

Superior commutation ruggedness

Infineon IGT65 Type N-Channel MOSFET, 38 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IGT65R045D2ATMA1

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