Infineon IGT65 Type N-Channel MOSFET, 70 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IGT65R025D2ATMA1

RS 제품 번호:: 351-969
제조사 부품 번호:: IGT65R025D2ATMA1
제조업체:: Infineon

Infineon IGT65 Type N-Channel MOSFET, 70 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IGT65R025D2ATMA1

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RS 제품 번호:: 351-969
제조사 부품 번호:: IGT65R025D2ATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	70A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PG-HSOF-8
	Series	IGT65
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.03Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	10V
	Typical Gate Charge Qg @ Vgs	11nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	236W
	Maximum Operating Temperature	150°C
	Standards/Approvals	JEDEC for Industrial Applications
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 70A
	Maximum Drain Source Voltage Vds 650V
	Package Type PG-HSOF-8
	Series IGT65
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.03Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 10V
	Typical Gate Charge Qg @ Vgs 11nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 236W
	Maximum Operating Temperature 150°C
	Standards/Approvals JEDEC for Industrial Applications
	Automotive Standard No

Datasheet - IGT65R025D2ATMA1

COO (Country of Origin):: MY

Infineon IGT65 Series MOSFET, 650V Drain Source Voltage, 70A Continuous Drain Current - IGT65R025D2ATMA1

This MOSFET is a high-voltage switching transistor designed for demanding industrial environments. It operates across an extended temperature range and is supplied in a surface-mount package suited to compact boards. The device is intended for power conversion and switching roles where high voltage tolerance and robust continuous current handling are required.

Features and Benefits:

• 650V drain withstand for high-voltage switching applications
• 70A continuous drain capability for sustained load handling
• 0.03Ω Rds(on) for reduced conduction losses
• 236W maximum power dissipation for thermal headroom
• 11nC typical gate charge for faster switching transitions
• 10V gate rating compatible with standard gate-drive voltages

Applications

• Ideal for industrial switch-mode power supplies and inverters
• Suitable for motor control stages in high-voltage systems
• Used with high-voltage DC-DC converters for energy conversion
• Can be used for hard-switching topologies in power electronics
• Appropriate for telecoms power distribution and auxiliary supplies

What package style is used and how does it affect board assembly?

The device is supplied in a PG-HSOF-8 surface-mount package which facilitates automated reflow soldering and compact PCB layouts while providing multiple thermal and electrical leads.

What gate-drive considerations should be made for reliable operation?

Keep the gate drive within ±10V and provide a low-impedance return path to minimise switching transients and ensure predictable turn-on and turn-off timing.

How does the temperature range influence deployment locations?

The rated operating span from -55°C to 150°C allows placement in both cold-start and high-temperature industrial enclosures without derating the basic switching capability.

What thermal management strategies are recommended for continuous operation?

Use adequate copper area or dedicated heatsinking under the package, ensure good PCB thermal vias, and consider airflow to maintain junction temperatures within safe limits.