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Infineon IQD0 Type N-Channel MOSFET, 151 A, 150 V Enhancement, 9-Pin PG-WHTFN-9 IQD063N15NM5CGSCATMA1

RS 제품 번호:: 351-911
제조사 부품 번호:: IQD063N15NM5CGSCATMA1
제조업체:: Infineon

Infineon IQD0 Type N-Channel MOSFET, 151 A, 150 V Enhancement, 9-Pin PG-WHTFN-9 IQD063N15NM5CGSCATMA1

대량 구매 할인 기용 가능

Subtotal (1 pack of 2 units)*

₩19,837.76

재고있음

5,000 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
2 - 18	₩9,918.88	₩19,837.76
20 - 198	₩8,930.00	₩17,860.00
200 - 998	₩8,232.52	₩16,465.04
1000 - 1998	₩7,640.32	₩15,278.76
2000 +	₩6,848.84	₩13,697.68

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 351-911
제조사 부품 번호:: IQD063N15NM5CGSCATMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	151A
	Maximum Drain Source Voltage Vds	150V
	Series	IQD0
	Package Type	PG-WHTFN-9
	Mount Type	Surface
	Pin Count	9
	Maximum Drain Source Resistance Rds	6.32mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	48nC
	Maximum Power Dissipation Pd	333W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.83V
	Maximum Operating Temperature	175°C
	Width	6 mm
	Height	0.75mm
	Length	5mm
	Standards/Approvals	IEC61249-2-21, RoHS, JEDEC
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 151A
	Maximum Drain Source Voltage Vds 150V
	Series IQD0
	Package Type PG-WHTFN-9
	Mount Type Surface
	Pin Count 9
	Maximum Drain Source Resistance Rds 6.32mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 48nC
	Maximum Power Dissipation Pd 333W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.83V
	Maximum Operating Temperature 175°C
	Width 6 mm
	Height 0.75mm
	Length 5mm
	Standards/Approvals IEC61249-2-21, RoHS, JEDEC
	Automotive Standard No

Datasheet - IQD063N15NM5CGSCATMA1

COO (Country of Origin):: MY

The Infineon Power MOSFET comes with a low RDS(on) of 6,32 mOhm combined with outstanding thermal performance for easy power loss management. The Center-Gate footprint is optimized for parallelization. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the over molded package. This enables higher system efficiency and power density for a large variety of end applications.

Cutting edge 150 V silicon technology

Outstanding FOMs

Improved thermal performance

Ultra-low parasitic

Maximized chip or package ratio

Center-Gate footprint

Industry-standard package

Infineon IQD0 Type N-Channel MOSFET, 151 A, 150 V Enhancement, 9-Pin PG-WHTFN-9 IQD063N15NM5CGSCATMA1

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