Infineon IQD0 Type N-Channel MOSFET, 276 A, 100 V Enhancement, 9-Pin PG-WHTFN-9 IQD020N10NM5CGSCATMA1

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₩19,048.16

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2 - 18₩9,524.08₩19,046.28
20 - 198₩8,576.56₩17,153.12
200 - 998₩7,911.04₩15,820.20
1000 - 1998₩7,337.64₩14,675.28
2000 +₩6,578.12₩13,156.24

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
351-909
제조사 부품 번호:
IQD020N10NM5CGSCATMA1
제조업체:
Infineon
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브랜드

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

276A

Maximum Drain Source Voltage Vds

100V

Series

IQD0

Package Type

PG-WHTFN-9

Mount Type

Surface

Pin Count

9

Maximum Drain Source Resistance Rds

2.05mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

107nC

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

333W

Maximum Operating Temperature

175°C

Length

5mm

Standards/Approvals

RoHS, Halogen-Free According to IEC61249-2-21, JEDEC Qualified

Height

0.75mm

Width

6 mm

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon Power MOSFET comes with a low RDS(on) of 2,05 mOhm combined with outstanding thermal performance for easy power loss management. The Center-Gate footprint is optimized for parallelization. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the over molded package. This enables higher system efficiency and power density for a large variety of end applications.

Cutting edge 100 V silicon technology

Outstanding FOMs

Improved thermal performance

Ultra-low parasitic

Maximized chip or package ratio

Center-Gate footprint

Industry-standard package

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