Infineon IQD0 Type N-Channel MOSFET, 276 A, 100 V Enhancement, 9-Pin PG-WHTFN-9 IQD020N10NM5CGSCATMA1
- RS 제품 번호:
- 351-909
- 제조사 부품 번호:
- IQD020N10NM5CGSCATMA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩19,753.50
재고있음
- 추가로 2026년 5월 11일 부터 5,000 개 단위 배송
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수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 18 | ₩9,876.75 | ₩19,753.50 |
| 20 - 198 | ₩8,892.00 | ₩17,784.00 |
| 200 - 998 | ₩8,199.75 | ₩16,399.50 |
| 1000 - 1998 | ₩7,614.75 | ₩15,229.50 |
| 2000 + | ₩6,825.00 | ₩13,650.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 351-909
- 제조사 부품 번호:
- IQD020N10NM5CGSCATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 276A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PG-WHTFN-9 | |
| Series | IQD0 | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 2.05mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 107nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 333W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Length | 5mm | |
| Standards/Approvals | RoHS, Halogen-Free According to IEC61249-2-21, JEDEC Qualified | |
| Height | 0.75mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 276A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PG-WHTFN-9 | ||
Series IQD0 | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 2.05mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 107nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 333W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Length 5mm | ||
Standards/Approvals RoHS, Halogen-Free According to IEC61249-2-21, JEDEC Qualified | ||
Height 0.75mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon Power MOSFET comes with a low RDS(on) of 2,05 mOhm combined with outstanding thermal performance for easy power loss management. The Center-Gate footprint is optimized for parallelization. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the over molded package. This enables higher system efficiency and power density for a large variety of end applications.
Cutting edge 100 V silicon technology
Outstanding FOMs
Improved thermal performance
Ultra-low parasitic
Maximized chip or package ratio
Center-Gate footprint
Industry-standard package
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