Semikron Danfoss SEMITOP SiC Power Module, 267 A, 1200 V SEMITOP E2 SK250MB120CR03TE2
- RS 제품 번호:
- 351-860
- 제조사 부품 번호:
- SK250MB120CR03TE2
- 제조업체:
- Semikron Danfoss
Subtotal (1 unit)*
₩395,420.40
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 |
|---|---|
| 1 + | ₩395,420.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 351-860
- 제조사 부품 번호:
- SK250MB120CR03TE2
- 제조업체:
- Semikron Danfoss
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Semikron Danfoss | |
| Product Type | SiC Power Module | |
| Maximum Continuous Drain Current Id | 267A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | SEMITOP E2 | |
| Series | SEMITOP | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 7.2mΩ | |
| Forward Voltage Vf | 4.6V | |
| Typical Gate Charge Qg @ Vgs | 708nC | |
| Maximum Gate Source Voltage Vgs | 15 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 60747-1, UL | |
| Length | 63mm | |
| Height | 12mm | |
| Width | 57 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Semikron Danfoss | ||
Product Type SiC Power Module | ||
Maximum Continuous Drain Current Id 267A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type SEMITOP E2 | ||
Series SEMITOP | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 7.2mΩ | ||
Forward Voltage Vf 4.6V | ||
Typical Gate Charge Qg @ Vgs 708nC | ||
Maximum Gate Source Voltage Vgs 15 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 60747-1, UL | ||
Length 63mm | ||
Height 12mm | ||
Width 57 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IT
The Semikron SiC MOSFET WS half-bridge features a 267 A current rating and is simple to drive with a +15V gate voltage. It offers optimized switching stability with module-integrated gate resistors and includes an integrated NTC temperature sensor for efficient thermal monitoring. UL recognized under file no. E63532.
Optimized design for superior thermal performance
Extremely low inductance design
Press Fit contact technology
1200V Planar Gen3 SiC MOSFET
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