Semikron Danfoss SEMITOP SiC Power Module, 185 A, 1200 V SEMITOP E2 SK150MB120CR03TE2
- RS 제품 번호:
- 351-858
- 제조사 부품 번호:
- SK150MB120CR03TE2
- 제조업체:
- Semikron Danfoss
Subtotal (1 unit)*
₩275,064.68
재고있음
- 40 개 단위 배송 준비 완료
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수량 | 한팩당 |
|---|---|
| 1 + | ₩275,064.68 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 351-858
- 제조사 부품 번호:
- SK150MB120CR03TE2
- 제조업체:
- Semikron Danfoss
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Semikron Danfoss | |
| Product Type | SiC Power Module | |
| Maximum Continuous Drain Current Id | 185A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SEMITOP | |
| Package Type | SEMITOP E2 | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 11mΩ | |
| Maximum Gate Source Voltage Vgs | 15 V | |
| Typical Gate Charge Qg @ Vgs | 472nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 57 mm | |
| Height | 12mm | |
| Standards/Approvals | UL | |
| Length | 63mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Semikron Danfoss | ||
Product Type SiC Power Module | ||
Maximum Continuous Drain Current Id 185A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SEMITOP | ||
Package Type SEMITOP E2 | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 11mΩ | ||
Maximum Gate Source Voltage Vgs 15 V | ||
Typical Gate Charge Qg @ Vgs 472nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Width 57 mm | ||
Height 12mm | ||
Standards/Approvals UL | ||
Length 63mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IT
The Semikron SiC MOSFET WS half-bridge features a 185 A current rating and is simple to drive with a +15V gate voltage. It offers optimized switching stability with module-integrated gate resistors and includes an integrated NTC temperature sensor for efficient thermal monitoring. UL recognized under file no. E63532.
Optimized design for superior thermal performance
Extremely low inductance design
Press Fit contact technology
1200V Planar Gen3 SiC MOSFET
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