Infineon OptiMOS-TM6 Type N-Channel MOSFET, 134 A, 200 V Enhancement, 3-Pin PG-TO263-3 IPB068N20NM6ATMA1

RS 제품 번호:: 349-400
제조사 부품 번호:: IPB068N20NM6ATMA1
제조업체:: Infineon

Infineon OptiMOS-TM6 Type N-Channel MOSFET, 134 A, 200 V Enhancement, 3-Pin PG-TO263-3 IPB068N20NM6ATMA1

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₩16,100.00

992 개 단위 배송 준비 완료

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RS 제품 번호:: 349-400
제조사 부품 번호:: IPB068N20NM6ATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	134A
	Maximum Drain Source Voltage Vds	200V
	Package Type	PG-TO263-3
	Series	OptiMOS-TM6
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	6.8mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	300W
	Typical Gate Charge Qg @ Vgs	73nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS, DIN IEC 68-1: 55/175/56, IEC61249-2-21
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 134A
	Maximum Drain Source Voltage Vds 200V
	Package Type PG-TO263-3
	Series OptiMOS-TM6
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 6.8mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 300W
	Typical Gate Charge Qg @ Vgs 73nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS, DIN IEC 68-1: 55/175/56, IEC61249-2-21
	Automotive Standard No

Datasheet - IPB068N20NM6ATMA1

COO (Country of Origin):: MY

Infineon OptiMOS-TM6 Series MOSFET, 300W Maximum Power Dissipation, 200V Maximum Drain Source Voltage - IPB068N20NM6ATMA1

This n-channel enhancement MOSFET is a high-current switching device designed for power-management applications requiring low conduction losses and robust thermal performance. It operates as a surface-mounted transistor in a PG-TO263-3 package, suitable for circuits where compact, high-power switching is needed across a wide temperature range.

Features and Benefits:

• 200V drain-source rating enables high-voltage switching capability
• 6.8mΩ low Rds(on) reduces conduction losses at high currents
• 134A continuous drain current supports heavy-current applications
• 300W power dissipation allows sustained thermal loading
• 73nC typical gate charge provides faster gate transitions
• -55 to 175°C operating range endures harsh temperature environments

Applications

• Suitable for synchronous rectification in power supplies
• Ideal for DC-DC converters in high-voltage rails
• Used with motor drivers requiring high continuous current
• Can be used for load switches in industrial power systems
• Suitable for high-temperature power-management modules

What mounting method is required for reliable thermal contact?

The device is designed for surface mounting

the PG-TO263-3 package permits soldered PCB attachment with a large thermal pad to aid heat transfer to the board and heatsinking arrangements.

How does the gate-drive requirement affect switching design?

The maximum gate-source voltage is 20V and the typical gate charge is 73nC, so gate-driver selection should provide sufficient current to achieve the desired switching speed while respecting Vgs limits.

What environmental conditions can it withstand?

It conforms to specified standards including RoHS and specified IEC temperature/humidity stress levels, and is rated to operate from -55°C up to 175°C for use in demanding thermal environments.

What electrical limits protect against over-stress?

The device’s maximum drain-source voltage is 200V and its continuous drain current rating is 134A

designs should include appropriate current limiting and transient protection to avoid exceeding these parameters.