Infineon CoolSiC Type N-Channel MOSFET, 60 A, 750 V Enhancement, 4-Pin PG-TO247-4 IMZA75R027M1HXKSA1

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10 - 99₩26,583.20
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RS 제품 번호:
349-341
제조사 부품 번호:
IMZA75R027M1HXKSA1
제조업체:
Infineon
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브랜드

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

750V

Package Type

PG-TO247-4

Series

CoolSiC

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

36mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

23 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

234W

Typical Gate Charge Qg @ Vgs

49nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Infineon 750 V CoolSiC Power Device G1 is built on Infineon’s solid silicon carbide technology, developed over more than 20 years. By leveraging the unique characteristics of wide bandgap SiC materials, the 750 V CoolSiC MOSFET delivers a unique combination of performance, reliability, and ease of use. It is specifically designed for high temperature and harsh operating conditions, enabling the simplified and cost effective deployment of systems with the highest efficiency. This MOSFET is perfect for applications requiring robust performance and energy efficient solutions.

Enhanced robustness and reliability for bus voltages beyond 500 V

Superior efficiency in hard switching

Higher switching frequency in soft switching topologies

Robustness against parasitic turn on for unipolar gate driving

Reduced switching losses through improved gate control

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