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Infineon CoolSiC Type N-Channel MOSFET, 103 A, 650 V Enhancement, 4-Pin PG-TO247-4 IMZA65R015M2HXKSA1

RS 제품 번호:: 349-334
제조사 부품 번호:: IMZA65R015M2HXKSA1
제조업체:: Infineon

Infineon CoolSiC Type N-Channel MOSFET, 103 A, 650 V Enhancement, 4-Pin PG-TO247-4 IMZA65R015M2HXKSA1

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Subtotal (1 unit)*

₩40,799.76

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238 개 단위 배송 준비 완료

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* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 349-334
제조사 부품 번호:: IMZA65R015M2HXKSA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	103A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PG-TO247-4
	Series	CoolSiC
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	18mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	79nC
	Maximum Power Dissipation Pd	341W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	23 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 103A
	Maximum Drain Source Voltage Vds 650V
	Package Type PG-TO247-4
	Series CoolSiC
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 18mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 79nC
	Maximum Power Dissipation Pd 341W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 23 V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IMZA65R015M2HXKSA1

The Infineon CoolSiC MOSFET 650 V G2 is built on Infineon’s robust 2nd generation Silicon Carbide trench technology, delivering unparalleled performance, superior reliability, and ease of use. This advanced MOSFET enables cost effective, highly efficient, and simplified designs, addressing the ever growing needs of modern power systems and markets. It offers a powerful solution for achieving superior system efficiency in various applications, ensuring optimal performance in demanding environments.

Ultra low switching losses

Robust against parasitic turn on even with 0 V turn off gate voltage

Flexible driving voltage and compatible with bipolar driving scheme

Robust body diode operation under hard commutation events

The .XT interconnection technology for best in class thermal performance

Infineon CoolSiC Type N-Channel MOSFET, 103 A, 650 V Enhancement, 4-Pin PG-TO247-4 IMZA65R015M2HXKSA1

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