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Infineon CoolSiC Type N-Channel MOSFET, 93 A, 650 V Enhancement, 3-Pin PG-TO-247 IMW65R015M2HXKSA1

RS 제품 번호:: 349-062
제조사 부품 번호:: IMW65R015M2HXKSA1
제조업체:: Infineon

Infineon CoolSiC Type N-Channel MOSFET, 93 A, 650 V Enhancement, 3-Pin PG-TO-247 IMW65R015M2HXKSA1

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Subtotal (1 unit)*

₩39,946.24

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240 개 단위 배송 준비 완료

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* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 349-062
제조사 부품 번호:: IMW65R015M2HXKSA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	93A
	Maximum Drain Source Voltage Vds	650V
	Series	CoolSiC
	Package Type	PG-TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	18mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	23 V
	Maximum Power Dissipation Pd	341W
	Typical Gate Charge Qg @ Vgs	79nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 93A
	Maximum Drain Source Voltage Vds 650V
	Series CoolSiC
	Package Type PG-TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 18mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 23 V
	Maximum Power Dissipation Pd 341W
	Typical Gate Charge Qg @ Vgs 79nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IMW65R015M2HXKSA1

The Infineon CoolSiC MOSFET 650 V G2 is built on Infineon’s robust 2nd generation Silicon Carbide trench technology, offering unparalleled performance, superior reliability, and excellent ease of use. This MOSFET is designed to enable cost effective, highly efficient, and simplified designs, addressing the ever-growing demands of modern power systems and markets. It is an ideal solution for achieving high system efficiency in a wide range of applications, delivering reliable performance and superior functionality.

Ultra low switching losses

Robust against parasitic turn on even with 0 V turn off gate voltage

Flexible driving voltage and compatible with bipolar driving scheme

Robust body diode operation under hard commutation events

The .XT interconnection technology for best in class thermal performance

Infineon CoolSiC Type N-Channel MOSFET, 93 A, 650 V Enhancement, 3-Pin PG-TO-247 IMW65R015M2HXKSA1

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