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Infineon CoolSiC Type N-Channel MOSFET, 83 A, 650 V Enhancement, 4-Pin PG-TO247-4 IMZA65R020M2HXKSA1

RS 제품 번호:: 349-335
제조사 부품 번호:: IMZA65R020M2HXKSA1
제조업체:: Infineon

Infineon CoolSiC Type N-Channel MOSFET, 83 A, 650 V Enhancement, 4-Pin PG-TO247-4 IMZA65R020M2HXKSA1

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Subtotal (1 unit)*

₩24,820.00

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72 개 단위 배송 준비 완료

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RS 제품 번호:: 349-335
제조사 부품 번호:: IMZA65R020M2HXKSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	83A
	Maximum Drain Source Voltage Vds	650V
	Series	CoolSiC
	Package Type	PG-TO247-4
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	24mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	23V
	Typical Gate Charge Qg @ Vgs	57nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	273W
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 83A
	Maximum Drain Source Voltage Vds 650V
	Series CoolSiC
	Package Type PG-TO247-4
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 24mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 23V
	Typical Gate Charge Qg @ Vgs 57nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 273W
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Infineon CoolSiC Series MOSFET, 650V Drain Source Voltage, 83A Continuous Drain Current - IMZA65R020M2HXKSA1

This MOSFET is a silicon carbide power transistor designed for high-voltage switching in power-electronics systems. It functions as an N-channel enhancement device for converting and controlling electrical energy where efficiency and thermal endurance are required. The component is supplied in a through-hole PG-TO247-4 package intended for robust mounting and heat dissipation in demanding electronic assemblies.

Features and Benefits:

• 650V blocking capability supports high-voltage designs
• 24mΩ low Rds(on) reduces conduction losses
• 83A continuous drain current enables high-current operation
• 273W power dissipation assists thermal management
• 57nC typical gate charge yields faster switching transitions
• -55°C to175°C rated temperature range extends operating envelope

Applications

• Suitable for industrial motor drives and inverters
• Ideal for high-voltage power supplies and converters
• Used with traction or renewable-energy power stages
• Can be used for fast-switching DC-DC conversion
• Appropriate for battery systems requiring high current handling

What gate voltage limits must designers observe?

The device must not be driven beyond a maximum gate-to-source voltage of 23V to avoid gate overstress.

How does the package affect thermal routing on a board?

The PG-TO247-4 through-hole format allows direct heatsink attachment and straightforward thermal pathing through the board for enhanced dissipation.

What switching behaviour can be expected from the gate charge value?

A typical gate charge of 57 nC indicates moderate gate-drive energy requirements, balancing switching speed and drive current needs.

What channel conduction mode applies during operation?

The transistor operates as an enhancement-mode N-channel device, requiring positive gate drive to conduct.