Infineon Type N-Channel MOSFET, 280 A, 1200 V Enhancement FF3MR12KM1HPHPSA1
- RS 제품 번호:
- 349-316
- 제조사 부품 번호:
- FF3MR12KM1HPHPSA1
- 제조업체:
- Infineon
Subtotal (1 unit)*
₩1,137,704.56
재고있음
- 추가로 2026년 1월 19일 부터 8 개 단위 배송
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수량 | 한팩당 |
|---|---|
| 1 + | ₩1,137,704.56 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 349-316
- 제조사 부품 번호:
- FF3MR12KM1HPHPSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 280A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 6.32mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Forward Voltage Vf | 5.59V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | 60749, 60068, IEC 60747 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 280A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 6.32mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Forward Voltage Vf 5.59V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals 60749, 60068, IEC 60747 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- HU
The Infineon 62 mm CoolSiC MOSFET Half-Bridge Module is designed in the well-known 62 mm housing, integrating M1H chip technology for high performance power applications. This module offers high current density, making it ideal for space-constrained systems that require robust performance. With low switching losses, it ensures greater efficiency at high switching frequencies. The superior gate oxide reliability enhances durability, extending the module’s operational life in demanding conditions.
Minimizes cooling efforts
Reduction in volume and size
Reduced system costs
Symmetrical module design
Standard construction technique
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