Infineon CoolSiC 2000 V SiC Trench MOSFET SiC N-Channel MOSFET, 123 A, 2000 V, 4-Pin PG-TO247-4-PLUS-NT14

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포장 옵션
RS 제품 번호:
284-861
제조사 부품 번호:
IMYH200R012M1HXKSA1
제조업체:
Infineon
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모두 선택

브랜드

Infineon

Channel Type

N

Maximum Continuous Drain Current

123 A

Maximum Drain Source Voltage

2000 V

Package Type

PG-TO247-4-PLUS-NT14

Series

CoolSiC 2000 V SiC Trench MOSFET

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

COO (Country of Origin):
MY
The Infineon CoolSiC 2000 V SiC Trench MOSFET stands out as a high performance component designed for demanding applications. Leveraging advanced silicon carbide technology, it delivers exceptional efficiency and thermal performance, making it ideal for use in modern power systems. With a robust structure and innovative features, this device ensures reliability across various applications, including string inverters, solar power optimisation, and electric vehicle charging. The carefully engineered MOSFET is optimally suited for high voltage environments, providing superior operational advantages for both industrial and commercial usage. Its advanced interconnection technology further contributes to its prestigious reputation in the market, enabling prolonged device lifespan and enhanced power management capabilities.

Delivers low switching losses for efficiency
Robust body diode for hard commutation
Benchmark gate threshold voltage for control
Very low on state resistance for conductivity
High thermal resistance minimizes overheating
Suitable for high voltage up to 2000 V

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