Infineon CoolSiC 2000 V SiC Trench MOSFET Type N-Channel MOSFET, 60 A, 2000 V Enhancement, 4-Pin PG-TO-247-4-PLUS-NT14
- RS 제품 번호:
- 284-861
- 제조사 부품 번호:
- IMYH200R012M1HXKSA1
- 제조업체:
- Infineon
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- RS 제품 번호:
- 284-861
- 제조사 부품 번호:
- IMYH200R012M1HXKSA1
- 제조업체:
- Infineon
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참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 2000V | |
| Package Type | PG-TO-247-4-PLUS-NT14 | |
| Series | CoolSiC 2000 V SiC Trench MOSFET | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 2000V | ||
Package Type PG-TO-247-4-PLUS-NT14 | ||
Series CoolSiC 2000 V SiC Trench MOSFET | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolSiC 2000 V SiC Trench MOSFET stands out as a high performance component designed for demanding applications. Leveraging Advanced silicon carbide technology, it delivers exceptional efficiency and thermal performance, making it Ideal for use in modern power systems. With a robust structure and innovative features, this device ensures reliability across various applications, including string inverters, solar power optimisation, and electric vehicle charging. The carefully engineered MOSFET is optimally suited for high voltage environments, providing superior operational advantages for both industrial and commercial usage. Its Advanced interconnection technology further contributes to its prestigious reputation in the market, enabling prolonged device lifespan and enhanced power management capabilities.
Delivers low switching losses for efficiency
Robust body diode for hard commutation
Benchmark gate threshold voltage for control
Very low on state resistance for conductivity
High thermal resistance minimizes overheating
Suitable for high voltage up to 2000 V
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