Infineon OptiMOS Type N-Channel MOSFET, 151 A, 60 V Enhancement, 8-Pin PG-WHSON-8 IQE022N06LM5SCATMA1

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₩16,784,640.00

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  • 2026년 3월 30일 부터 배송
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RS 제품 번호:
284-754
제조사 부품 번호:
IQE022N06LM5SCATMA1
제조업체:
Infineon
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모두 선택

브랜드

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

151A

Maximum Drain Source Voltage Vds

60V

Package Type

PG-WHSON-8

Series

OptiMOS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.2mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

100W

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

26nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, JEDEC, IEC61249-2-21

Automotive Standard

No

The Infineon MOSFET features an OptiMOS 5 Power Transistor is a highly efficient MOSFET designed to meet the demands of Advanced power management applications. With a power dissipation capacity that allows it to operate reliably under intense conditions, this power transistor ensures optimal efficiency and thermal management. Its Pb free and RoHS compliant construction endorses its usability in eco sensitive applications, while also being halogen free, enhancing its adaptability across various sectors. Fully qualified according to JEDEC standards for industrial applications, it is a trusted component for engineers seeking reliable, high performance solutions.

Optimised for power management

Supports synchronous rectification in SMPS

N channel with logic level compatibility

Very low on resistance for thermal performance

Superior thermal resistance for reliability

100% avalanche tested for operational assurance

Complies with environmental regulations

Comprehensive validation for industrial use

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