onsemi NXH Type P, Type N-Channel MOSFET, 192 A, 1.2 kV Enhancement, 44-Pin PIM44
- RS 제품 번호:
- 277-057P
- 제조사 부품 번호:
- NXH600B100H4Q2F2PG
- 제조업체:
- onsemi
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Subtotal 1 unit (supplied in a tray)*
₩487,340.00
일시적 품절
- 36 개 단위 배송 준비 완료
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수량 | 한팩당 |
|---|---|
| 1 + | ₩487,340.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 277-057P
- 제조사 부품 번호:
- NXH600B100H4Q2F2PG
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 192A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | PIM44 | |
| Series | NXH | |
| Mount Type | Snap-in | |
| Pin Count | 44 | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.55V | |
| Typical Gate Charge Qg @ Vgs | 766nC | |
| Maximum Power Dissipation Pd | 511W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 192A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type PIM44 | ||
Series NXH | ||
Mount Type Snap-in | ||
Pin Count 44 | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.55V | ||
Typical Gate Charge Qg @ Vgs 766nC | ||
Maximum Power Dissipation Pd 511W | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ON Semiconductor Hybrid Three Channel Symmetric Boost Module features two 1000V, 200A IGBTs and two 1200V, 60A SiC diodes per channel, along with an NTC thermistor for temperature monitoring. The module utilizes trench with field stop technology for high efficiency, significantly reducing switching losses and system power dissipation. Its design provides high power density, making it suitable for demanding power applications that require optimal performance and thermal management.
Low inductive layout
Low package height
Pb free
Halide free and RoHS compliant
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