onsemi NTMFS Type N-Channel MOSFET, 111 A, 40 V Enhancement, 5-Pin DFN-5 NTMFS2D3N04XMT1G
- RS 제품 번호:
- 220-602
- 제조사 부품 번호:
- NTMFS2D3N04XMT1G
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 tape of 10 units)*
₩15,073.50
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | Per Tape* |
|---|---|---|
| 10 - 90 | ₩1,507.35 | ₩15,073.50 |
| 100 - 240 | ₩1,433.25 | ₩14,332.50 |
| 250 - 490 | ₩1,405.95 | ₩14,059.50 |
| 500 - 990 | ₩1,376.70 | ₩13,767.00 |
| 1000 + | ₩1,349.40 | ₩13,494.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 220-602
- 제조사 부품 번호:
- NTMFS2D3N04XMT1G
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 111A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFN-5 | |
| Series | NTMFS | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 2.35mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.82V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 53W | |
| Typical Gate Charge Qg @ Vgs | 22.1nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 5mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 111A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFN-5 | ||
Series NTMFS | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 2.35mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.82V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 53W | ||
Typical Gate Charge Qg @ Vgs 22.1nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The ON Semiconductor Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.
Halogen Free
RoHS Compliant
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