Nexperia NextPower-S3 technology Type N-Channel MOSFET, 240 A, 40 V Enhancement, 5-Pin LFPAK PSMN1R4-40YLDX

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Subtotal (1 reel of 1500 units)*

₩3,180,960.00

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  • 2026년 8월 03일 부터 배송
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1500 +₩2,120.64₩3,181,242.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
219-473
제조사 부품 번호:
PSMN1R4-40YLDX
제조업체:
Nexperia
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브랜드

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

240A

Maximum Drain Source Voltage Vds

40V

Series

NextPower-S3 technology

Package Type

LFPAK

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

45nC

Maximum Power Dissipation Pd

238W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
PH
The Nexperia N-Channel MOSFET features Advanced TrenchMOS Super junction technology. This product has been designed and qualified for high performance power switching applications. It is designed for high-performance applications, including synchronous rectification, DC-to-DC converters, server power supplies, brushless DC motor control and battery protection. It offers high efficiency and reliable performance across a wide range of power management tasks.

Low parasitic inductance and resistance

High reliability clip bonded and solder die attach Power SO8 package

Wave solder able

Superfast switching with soft recovery

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