Nexperia NextPower-S3 technology N-Channel MOSFET, 240 A, 40 V Enhancement, 5-Pin LFPAK PSMN1R4-40YLDX
- RS 제품 번호:
- 219-474
- 제조사 부품 번호:
- PSMN1R4-40YLDX
- 제조업체:
- Nexperia
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 unit, on tapes of 1)*
₩3,520.00
일시적 품절
- 2027년 1월 26일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
Tape(s) | Per Tape |
|---|---|
| 1 - 9 | ₩3,520.00 |
| 10 - 99 | ₩3,180.00 |
| 100 - 499 | ₩2,920.00 |
| 500 - 999 | ₩2,720.00 |
| 1000 + | ₩2,420.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
대체품
이 제품은 현재 공급 불가입니다. 아래 제품들은 당사에서 추천드리는 대체품입니다.
개당가격(3000개가 1릴안에)
₩5,281,800.00
- RS 제품 번호:
- 219-474
- 제조사 부품 번호:
- PSMN1R4-40YLDX
- 제조업체:
- Nexperia
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 240A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | LFPAK | |
| Series | NextPower-S3 technology | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 238W | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Nexperia | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 240A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type LFPAK | ||
Series NextPower-S3 technology | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 238W | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The Nexperia N-Channel MOSFET features Advanced TrenchMOS Super junction technology. This product has been designed and qualified for high performance power switching applications. It is designed for high-performance applications, including synchronous rectification, DC-to-DC converters, server power supplies, brushless DC motor control and battery protection. It offers high efficiency and reliable performance across a wide range of power management tasks.
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package
Wave solder able
Superfast switching with soft recovery
관련된 링크들
- Nexperia NextPower-S3 technology Type N-Channel MOSFET, 240 A, 40 V Enhancement, 5-Pin LFPAK PSMN1R4-40YLDX
- Nexperia NextPower-S3 Schottky-Plus technology Type N-Channel MOSFET, 290 A, 40 V Enhancement, 5-Pin LFPAK
- Nexperia NextPowerS3 Technology Type N-Channel MOSFET, 100 A, 30 V Enhancement, 5-Pin LFPAK PSMN1R4-30YLDX
- Nexperia PSM Type N-Channel MOSFET, 120 A, 40 V Enhancement, 5-Pin LFPAK PSMN3R2-40YLDX
- Nexperia PSM Type N-Channel MOSFET, 280 A, 40 V Enhancement, 5-Pin LFPAK PSMN1R0-40YLDX
- Nexperia NextPower-S3 Schottky-Plus Type N-Channel MOSFET, 240 A, 40 V Enhancement, 5-Pin LFPAK PSMN1R4-40YSHX
- Nexperia NextPower Type N-Channel MOSFET, 55 A, 100 V Enhancement, 5-Pin LFPAK PSMN015-100YSFX
- Nexperia NextPower Type N-Channel MOSFET, 65 A, 100 V Enhancement, 5-Pin LFPAK PSMN012-100YSFX