제조사부품번호

IXYS Single HiperFET, Polar N-Channel MOSFET, 150 A, 150 V Enhancement, 4-Pin SOT-227 IXFN180N15P

RS 제품 번호:: 194-259P
제조사 부품 번호:: IXFN180N15P
제조업체:: IXYS

IXYS Single HiperFET, Polar N-Channel MOSFET, 150 A, 150 V Enhancement, 4-Pin SOT-227 IXFN180N15P

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RS 제품 번호:: 194-259P
제조사 부품 번호:: IXFN180N15P
제조업체:: IXYS

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모두 선택	제품 정보	값
	브랜드	IXYS
	Transistor Configuration	Single
	Series	HiperFET, Polar
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current (Id)	150 A
	Maximum Drain Source Voltage (Vds)	150 V
	Channel Mode	Enhancement
	Pin Count	4
	Package Type	SOT-227
	Height	9.6 mm
	Length	38.23 mm
	Maximum Drain Source Resistance (Rds)	11 mΩ
	Maximum Gate Source Voltage (Vgs)	-20 V, +20 V
	Maximum Operating Temperature	175 °C
	Maximum Power Dissipation (Pd)	680 W
	Minimum Operating Temperature	-55 °C
	Mount Type	Panel Mount
	Typical Gate Charge (Qg) @ Vgs	240 nC
	Width	25.42 mm

	모두 선택
	브랜드 IXYS
	Transistor Configuration Single
	Series HiperFET, Polar
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current (Id) 150 A
	Maximum Drain Source Voltage (Vds) 150 V
	Channel Mode Enhancement
	Pin Count 4
	Package Type SOT-227
	Height 9.6 mm
	Length 38.23 mm
	Maximum Drain Source Resistance (Rds) 11 mΩ
	Maximum Gate Source Voltage (Vgs) -20 V, +20 V
	Maximum Operating Temperature 175 °C
	Maximum Power Dissipation (Pd) 680 W
	Minimum Operating Temperature -55 °C
	Mount Type Panel Mount
	Typical Gate Charge (Qg) @ Vgs 240 nC
	Width 25.42 mm

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