STMicroelectronics SuperMESH Dual N-Channel MOSFET, 0.4 A, 450 V Enhancement, 8-Pin SO-8 STS1DNC45
- RS 제품 번호:
- 151-447
- 제조사 부품 번호:
- STS1DNC45
- 제조업체:
- STMicroelectronics
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 tape of 10 units)*
₩25,662.00
단종되는 중
- 최종적인 5,930 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | Per Tape* |
|---|---|---|
| 10 - 90 | ₩2,566.20 | ₩25,662.00 |
| 100 - 240 | ₩2,435.55 | ₩24,355.50 |
| 250 - 490 | ₩2,260.05 | ₩22,600.50 |
| 500 - 990 | ₩2,076.75 | ₩20,767.50 |
| 1000 + | ₩1,998.75 | ₩19,987.50 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 151-447
- 제조사 부품 번호:
- STS1DNC45
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | Dual N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 0.4A | |
| Maximum Drain Source Voltage Vds | 450V | |
| Series | SuperMESH | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2W | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -65°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type Dual N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 0.4A | ||
Maximum Drain Source Voltage Vds 450V | ||
Series SuperMESH | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.5Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2W | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -65°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Standard outline for easy automated surface mount assembly
Gate charge minimized
관련된 링크들
- STMicroelectronics SuperMESH Dual N-Channel MOSFET, 0.4 A, 450 V Enhancement, 8-Pin SO-8 STS1DNC45
- STMicroelectronics STS N channel-Channel Power MOSFET, 10 A, 30 V Enhancement, 8-Pin SO-8 STS10N3LH5
- STMicroelectronics Type N-Channel MOSFET, 7.5 A, 60 V Enhancement, 8-Pin SO-8 STS7NF60L
- STMicroelectronics Type N-Channel MOSFET, 7.5 A, 60 V Enhancement, 8-Pin SO-8
- Infineon Dual HEXFET 1 Type N-Channel MOSFET, 3 A, 50 V Enhancement, 8-Pin SO-8
- Infineon Dual HEXFET 1 Type N-Channel MOSFET, 21 A, 30 V Enhancement, 8-Pin SO-8
- Infineon Dual HEXFET 2 Type N-Channel MOSFET, 5.1 A, 55 V Enhancement, 8-Pin SO-8
- Infineon Dual HEXFET 1 Type N-Channel Power MOSFET, 10 A, 20 V Enhancement, 8-Pin SO-8