onsemi CPH3910-TL-E, Junction Type N-Channel JFET-Channel N-Channel JFET, 25 V 50 mA, 3-Pin CPH
- RS 제품 번호:
- 765-321P
- 제조사 부품 번호:
- CPH3910-TL-E
- 제조업체:
- onsemi
N
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal 200 units (supplied on a reel)*
₩91,200.00
재고있음
- 2,940 개 단위 배송 준비 완료
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수량 | 한팩당 |
|---|---|
| 200 - 980 | ₩456.00 |
| 1000 - 1980 | ₩354.00 |
| 2000 + | ₩318.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 765-321P
- 제조사 부품 번호:
- CPH3910-TL-E
- 제조업체:
- onsemi
사양
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | N-Channel JFET | |
| Channel Type | N | |
| Sub Type | JFET | |
| Maximum Drain Source Voltage Vds | 25V | |
| Configuration | Junction Type | |
| Mount Type | Surface | |
| Package Type | CPH | |
| Minimum Operating Temperature | -55°C | |
| Drain Source Current Ids | 50 mA | |
| Maximum Power Dissipation Pd | 400mW | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.9mm | |
| Height | 900μm | |
| Series | CPH3 | |
| Length | 2.8mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type N-Channel JFET | ||
Channel Type N | ||
Sub Type JFET | ||
Maximum Drain Source Voltage Vds 25V | ||
Configuration Junction Type | ||
Mount Type Surface | ||
Package Type CPH | ||
Minimum Operating Temperature -55°C | ||
Drain Source Current Ids 50 mA | ||
Maximum Power Dissipation Pd 400mW | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Width 2.9mm | ||
Height 900μm | ||
Series CPH3 | ||
Length 2.8mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The onsemi N-Channel JFET designed for applications requiring precision RF amplification and low noise operation. With a maximum drain-to-source voltage of 25V and a typical forward transfer admittance of 40 mS, this component excels in demanding environments. Ideal for AM tuner RF amplification and low noise applications, its ensures reliable performance across a range of temperatures and power levels. The device's low noise figure and high input capacitance make it suitable for critical communication signalling tasks, ensuring clarity and fidelity in signal transmission.
Features a maximum drain current of 50 mA for robust signal processing
Incorporates a gate current capability of 10 mA for versatile circuit integration
Offers a high input capacitance of 6.0 pF, enhancing signal stability
Provides a critical cutoff voltage range, ensuring efficient operation in diverse conditions
Designed as a Pb-free device, meeting modern environmental standards
Exhibits a low gate-to-drain breakdown voltage of −25V, promoting enhanced safety in usage
Delivers a significant noise figure of 2.1 dB, reducing unwanted noise interference
Optimised for AM tuner RF amplification, fostering superior audio quality in communications
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