STMicroelectronics STGF10NB60SD IGBT, 23 A 600 V, 3-Pin TO-220FP, Through Hole
- RS 제품 번호:
- 877-2873
- 제조사 부품 번호:
- STGF10NB60SD
- 제조업체:
- STMicroelectronics
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대량 구매 할인 기용 가능
Subtotal (1 pack of 10 units)*
₩22,090.00
재고있음
- 추가로 2025년 12월 29일 부터 30 개 단위 배송
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수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 10 | ₩2,209.00 | ₩22,090.00 |
| 20 - 20 | ₩2,152.60 | ₩21,526.00 |
| 30 + | ₩2,120.64 | ₩21,206.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 877-2873
- 제조사 부품 번호:
- STGF10NB60SD
- 제조업체:
- STMicroelectronics
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Maximum Continuous Collector Current | 23 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 25 W | |
| Package Type | TO-220FP | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 10.4 x 4.6 x 20mm | |
| Minimum Operating Temperature | -55 °C | |
| Energy Rating | 8mJ | |
| Maximum Operating Temperature | +150 °C | |
| Gate Capacitance | 610pF | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Maximum Continuous Collector Current 23 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 25 W | ||
Package Type TO-220FP | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 10.4 x 4.6 x 20mm | ||
Minimum Operating Temperature -55 °C | ||
Energy Rating 8mJ | ||
Maximum Operating Temperature +150 °C | ||
Gate Capacitance 610pF | ||
- COO (Country of Origin):
- CN
IGBT Discretes, STMicroelectronics
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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