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STMicroelectronics STGF20H65DFB2, Type N-Channel IGBT, 40 A 650 V, 3-Pin TO-220FP, Through Hole

RS 제품 번호:: 204-9872
제조사 부품 번호:: STGF20H65DFB2
제조업체:: STMicroelectronics

STMicroelectronics STGF20H65DFB2, Type N-Channel IGBT, 40 A 650 V, 3-Pin TO-220FP, Through Hole

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대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩15,058.80

재고있음

20 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
5 - 10	₩3,011.76	₩15,058.80
15 - 20	₩2,929.04	₩14,645.20
25 +	₩2,887.68	₩14,438.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 204-9872
제조사 부품 번호:: STGF20H65DFB2
제조업체:: STMicroelectronics

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Maximum Continuous Collector Current Ic	40A
	Product Type	IGBT
	Maximum Collector Emitter Voltage Vceo	650V
	Maximum Power Dissipation Pd	45W
	Package Type	TO-220FP
	Mount Type	Through Hole
	Channel Type	Type N
	Pin Count	3
	Switching Speed	1MHz
	Maximum Gate Emitter Voltage VGEO	20 V
	Maximum Collector Emitter Saturation Voltage VceSAT	2.1V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Series	STG
	Standards/Approvals	RoHS
	Length	10.4mm
	Width	16.4 mm
	Height	4.6mm
	Automotive Standard	No

	모두 선택
	브랜드 STMicroelectronics
	Maximum Continuous Collector Current Ic 40A
	Product Type IGBT
	Maximum Collector Emitter Voltage Vceo 650V
	Maximum Power Dissipation Pd 45W
	Package Type TO-220FP
	Mount Type Through Hole
	Channel Type Type N
	Pin Count 3
	Switching Speed 1MHz
	Maximum Gate Emitter Voltage VGEO 20 V
	Maximum Collector Emitter Saturation Voltage VceSAT 2.1V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Series STG
	Standards/Approvals RoHS
	Length 10.4mm
	Width 16.4 mm
	Height 4.6mm
	Automotive Standard No

Datasheet - STGF20H65DFB2

COO (Country of Origin):: CN

The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

Maximum junction temperature : TJ = 175 °C

Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A

Very fast and soft recovery co-packaged diode

Minimized tail current

Tight parameter distribution

Low thermal resistance

STMicroelectronics STGF20H65DFB2, Type N-Channel IGBT, 40 A 650 V, 3-Pin TO-220FP, Through Hole

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