onsemi ISL9V2040D3ST, Type N-Channel IGBT, 10 A 430 V, 3-Pin TO-252, Surface
- RS 제품 번호:
- 862-9347
- 제조사 부품 번호:
- ISL9V2040D3ST
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩11,693.60
단종되는 중
- 최종적인 2,145 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 620 | ₩2,338.72 | ₩11,693.60 |
| 625 - 1245 | ₩2,297.36 | ₩11,486.80 |
| 1250 + | ₩2,252.24 | ₩11,261.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 862-9347
- 제조사 부품 번호:
- ISL9V2040D3ST
- 제조업체:
- onsemi
사양
참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 10A | |
| Maximum Collector Emitter Voltage Vceo | 430V | |
| Maximum Power Dissipation Pd | 130W | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.9V | |
| Maximum Gate Emitter Voltage VGEO | ±10 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Series | EcoSPARK | |
| Energy Rating | 200mJ | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 10A | ||
Maximum Collector Emitter Voltage Vceo 430V | ||
Maximum Power Dissipation Pd 130W | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.9V | ||
Maximum Gate Emitter Voltage VGEO ±10 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Series EcoSPARK | ||
Energy Rating 200mJ | ||
Automotive Standard No | ||
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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