Fairchild ISL9V3040P3 IGBT, 21 A 450 V, 3-Pin TO-220AB, Through Hole
- RS 제품 번호:
- 166-2175
- 제조사 부품 번호:
- ISL9V3040P3
- 제조업체:
- Fairchild Semiconductor
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대량 구매 할인 기용 가능
Subtotal (1 tube of 50 units)*
₩165,252.00
단종되는 중
- 최종적인 1,150 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 50 - 50 | ₩3,305.04 | ₩165,214.40 |
| 100 - 150 | ₩3,231.72 | ₩161,623.60 |
| 200 + | ₩3,160.28 | ₩158,032.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 166-2175
- 제조사 부품 번호:
- ISL9V3040P3
- 제조업체:
- Fairchild Semiconductor
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Fairchild Semiconductor | |
| Maximum Continuous Collector Current | 21 A | |
| Maximum Collector Emitter Voltage | 450 V | |
| Maximum Gate Emitter Voltage | ±14V | |
| Maximum Power Dissipation | 150 W | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 10.67 x 4.7 x 16.3mm | |
| Minimum Operating Temperature | -40 °C | |
| Maximum Operating Temperature | +175 °C | |
| 모두 선택 | ||
|---|---|---|
브랜드 Fairchild Semiconductor | ||
Maximum Continuous Collector Current 21 A | ||
Maximum Collector Emitter Voltage 450 V | ||
Maximum Gate Emitter Voltage ±14V | ||
Maximum Power Dissipation 150 W | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 10.67 x 4.7 x 16.3mm | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +175 °C | ||
Discrete IGBTs, Fairchild Semiconductor
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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