onsemi, Type N-Channel Ignition IGBT, 21 A 430 V, 3-Pin TO-252, Surface
- RS 제품 번호:
- 166-2138
- 제조사 부품 번호:
- ISL9V3040D3ST
- 제조업체:
- onsemi
현재 비가용
죄송합니다. 언제 재입고될지 모릅니다.
- RS 제품 번호:
- 166-2138
- 제조사 부품 번호:
- ISL9V3040D3ST
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Maximum Continuous Collector Current Ic | 21A | |
| Product Type | Ignition IGBT | |
| Maximum Collector Emitter Voltage Vceo | 430V | |
| Maximum Power Dissipation Pd | 150W | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Maximum Gate Emitter Voltage VGEO | ±10 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.2V | |
| Maximum Operating Temperature | 175°C | |
| Series | EcoSPARK | |
| Standards/Approvals | RoHS | |
| Energy Rating | 300mJ | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Maximum Continuous Collector Current Ic 21A | ||
Product Type Ignition IGBT | ||
Maximum Collector Emitter Voltage Vceo 430V | ||
Maximum Power Dissipation Pd 150W | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Maximum Gate Emitter Voltage VGEO ±10 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.2V | ||
Maximum Operating Temperature 175°C | ||
Series EcoSPARK | ||
Standards/Approvals RoHS | ||
Energy Rating 300mJ | ||
Automotive Standard AEC-Q101 | ||
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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