onsemi, Type N-Channel Ignition IGBT, 21 A 430 V, 3-Pin TO-252, Surface

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RS 제품 번호:
166-2138
제조사 부품 번호:
ISL9V3040D3ST
제조업체:
onsemi
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브랜드

onsemi

Product Type

Ignition IGBT

Maximum Continuous Collector Current Ic

21A

Maximum Collector Emitter Voltage Vceo

430V

Maximum Power Dissipation Pd

150W

Package Type

TO-252

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

±10 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.2V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Series

EcoSPARK

Automotive Standard

AEC-Q101

Energy Rating

300mJ

Discrete IGBTs, Fairchild Semiconductor


IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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