Name: IXYS, N-Channel high Speed IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole
Brand: IXYS
SKU: 808-0265P
Availability: BackOrder

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314 개 단위 배송 준비 완료

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모두 선택	제품 정보	값
	브랜드	IXYS
	Maximum Continuous Collector Current Ic	40A
	Product Type	high Speed IGBT
	Maximum Collector Emitter Voltage Vceo	1200V
	Maximum Power Dissipation Pd	278W
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	N
	Pin Count	3
	Switching Speed	50kHz
	Maximum Gate Emitter Voltage VGEO	±20 V
	Maximum Collector Emitter Saturation Voltage VceSAT	3.4V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Series	1200V XPTTM GenX3TM IGBTs
	Automotive Standard	No
	Energy Rating	400mJ

	모두 선택
	브랜드 IXYS
	Maximum Continuous Collector Current Ic 40A
	Product Type high Speed IGBT
	Maximum Collector Emitter Voltage Vceo 1200V
	Maximum Power Dissipation Pd 278W
	Package Type TO-247
	Mount Type Through Hole
	Channel Type N
	Pin Count 3
	Switching Speed 50kHz
	Maximum Gate Emitter Voltage VGEO ±20 V
	Maximum Collector Emitter Saturation Voltage VceSAT 3.4V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Series 1200V XPTTM GenX3TM IGBTs
	Automotive Standard No
	Energy Rating 400mJ

IGBT Discretes, IXYS XPT series

The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.

High power density and low VCE(sat)

Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage

Short circuit capability for 10usec

Positive on-state voltage temperature coefficient

Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes

International standard and proprietary high voltage packages

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

₩96,480.00

₩12,060.00/unit

수량	한팩당
8 - 14	₩12,060.00
16 +	₩11,880.00

IXYS, N-Channel high Speed IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole

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IGBT Discretes, IXYS XPT series

IGBT Discretes & Modules, IXYS

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