Littelfuse NGB8207ABNT4G, N-Channel IGBT, 20 A 365 V, 3-Pin TO-263, Surface
- RS 제품 번호:
- 805-1753
- 제조사 부품 번호:
- NGB8207ABNT4G
- 제조업체:
- Littelfuse
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RS는 이 제품을 더 이상 판매하지 않습니다.
- RS 제품 번호:
- 805-1753
- 제조사 부품 번호:
- NGB8207ABNT4G
- 제조업체:
- Littelfuse
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참조 문서
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Littelfuse | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 20A | |
| Maximum Collector Emitter Voltage Vceo | 365V | |
| Maximum Power Dissipation Pd | 165W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 6μs | |
| Maximum Gate Emitter Voltage VGEO | 15 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.29mm | |
| Width | 15.88mm | |
| Height | 4.83mm | |
| Series | Ignition IGBT | |
| Standards/Approvals | RoHS | |
| Energy Rating | 500mJ | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Littelfuse | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 20A | ||
Maximum Collector Emitter Voltage Vceo 365V | ||
Maximum Power Dissipation Pd 165W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 6μs | ||
Maximum Gate Emitter Voltage VGEO 15 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.2V | ||
Maximum Operating Temperature 175°C | ||
Length 10.29mm | ||
Width 15.88mm | ||
Height 4.83mm | ||
Series Ignition IGBT | ||
Standards/Approvals RoHS | ||
Energy Rating 500mJ | ||
Automotive Standard No | ||
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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