Littelfuse NGB8207ABNT4G IGBT, 50 A 365 V, 3-Pin D2PAK (TO-263), Surface Mount
- RS 제품 번호:
- 805-1753
- 제조사 부품 번호:
- NGB8207ABNT4G
- 제조업체:
- Littelfuse
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
Subtotal (1 pack of 5 units)*
₩16,412.40
마지막 RS 재고
- 최종적인 225 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 + | ₩3,282.48 | ₩16,412.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 805-1753
- 제조사 부품 번호:
- NGB8207ABNT4G
- 제조업체:
- Littelfuse
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Littelfuse | |
| Maximum Continuous Collector Current | 50 A | |
| Maximum Collector Emitter Voltage | 365 V | |
| Maximum Gate Emitter Voltage | ±15V | |
| Maximum Power Dissipation | 165 W | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 10.29 x 9.65 x 4.83mm | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| 모두 선택 | ||
|---|---|---|
브랜드 Littelfuse | ||
Maximum Continuous Collector Current 50 A | ||
Maximum Collector Emitter Voltage 365 V | ||
Maximum Gate Emitter Voltage ±15V | ||
Maximum Power Dissipation 165 W | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 10.29 x 9.65 x 4.83mm | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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