IXYS IXYN82N120C3H1 IGBT, 105 A 1200 V, 4-Pin SOT-227B, Surface Mount

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₩72,868.80

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  • 2026년 4월 08일 부터 10 개 단위 배송
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* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
804-7622
제조사 부품 번호:
IXYN82N120C3H1
제조업체:
IXYS
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

IXYS

Maximum Continuous Collector Current

105 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

500 W

Package Type

SOT-227B

Mounting Type

Surface Mount

Channel Type

N

Pin Count

4

Switching Speed

20 → 50kHz

Transistor Configuration

Single

Dimensions

38.2 x 25 x 9.6mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

IGBT Discretes, IXYS XPT series


The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.

High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



IGBT Discretes & Modules, IXYS


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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