IXYS IXYN82N120C3H1, Type N-Channel IGBT, 105 A 1200 V, 4-Pin SOT-227B, Surface
- RS 제품 번호:
- 146-1762
- 제조사 부품 번호:
- IXYN82N120C3H1
- 제조업체:
- IXYS
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- RS 제품 번호:
- 146-1762
- 제조사 부품 번호:
- IXYN82N120C3H1
- 제조업체:
- IXYS
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | IXYS | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 105A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 500W | |
| Package Type | SOT-227B | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 4 | |
| Switching Speed | 50kHz | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 3.2V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Series | GenX3TM | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Energy Rating | 800mJ | |
| 모두 선택 | ||
|---|---|---|
브랜드 IXYS | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 105A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 500W | ||
Package Type SOT-227B | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 4 | ||
Switching Speed 50kHz | ||
Maximum Collector Emitter Saturation Voltage VceSAT 3.2V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Series GenX3TM | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Energy Rating 800mJ | ||
- COO (Country of Origin):
- US
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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