IXYS IXA70I1200NA IGBT, 100 A 1200 V, 4-Pin SOT-227B, Surface Mount
- RS 제품 번호:
- 804-7625
- 제조사 부품 번호:
- IXA70I1200NA
- 제조업체:
- IXYS
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩61,269.20
마지막 RS 재고
- 추가로 2025년 12월 29일 부터 1 개 단위 배송
- 추가로 2025년 12월 29일 부터 6 개 단위 배송
- 추가로 2026년 2월 13일 부터 10 개 단위 배송
수량 | 한팩당 |
|---|---|
| 1 - 2 | ₩61,269.20 |
| 3 - 4 | ₩59,746.40 |
| 5 + | ₩58,825.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 804-7625
- 제조사 부품 번호:
- IXA70I1200NA
- 제조업체:
- IXYS
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | IXYS | |
| Maximum Continuous Collector Current | 100 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 350 W | |
| Package Type | SOT-227B | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 4 | |
| Transistor Configuration | Single | |
| Dimensions | 38.23 x 25.25 x 9.6mm | |
| Minimum Operating Temperature | -40 °C | |
| Maximum Operating Temperature | +125 °C | |
| 모두 선택 | ||
|---|---|---|
브랜드 IXYS | ||
Maximum Continuous Collector Current 100 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 350 W | ||
Package Type SOT-227B | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 4 | ||
Transistor Configuration Single | ||
Dimensions 38.23 x 25.25 x 9.6mm | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +125 °C | ||
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
관련된 링크들
- IXYS IXA70I1200NA IGBT, 100 A 1200 V, 4-Pin SOT-227B, Surface Mount
- IXYS IXA60IF1200NA IGBT, 88 A 1200 V, 4-Pin SOT-227B, Surface Mount
- IXYS IXA37IF1200HJ IGBT, 58 A 1200 V, 3-Pin ISOPLUS247, Through Hole
- IXYS IXA45IF1200HB IGBT, 78 A 1200 V, 3-Pin TO-247, Through Hole
- IXYS IXA12IF1200HB IGBT, 20 A 1200 V, 3-Pin TO-247, Through Hole
- IXYS IXYN100N120C3 IGBT, 152 A 1200 V, 4-Pin SOT-227B, Surface Mount
- Vishay VS-GT55NA120UX Single IGBT, 68 A 1200 V, 4-Pin SOT-227, Panel Mount
- IXYS IXYN82N120C3H1 IGBT, 105 A 1200 V, 4-Pin SOT-227B, Surface Mount
