Infineon IGW75N60TFKSA1, N-Channel Power Semiconductor, 75 A 600 V, 3-Pin TO-247, Through Hole
- RS 제품 번호:
- 754-5395
- 제조사 부품 번호:
- IGW75N60TFKSA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 unit)*
₩8,540.00
마지막 RS 재고
- 최종적인 158 개 unit(s)이 배송 준비 됨
수량 | 한팩당 |
|---|---|
| 1 - 7 | ₩8,540.00 |
| 8 - 14 | ₩8,360.00 |
| 15 + | ₩8,200.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 754-5395
- 제조사 부품 번호:
- IGW75N60TFKSA1
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | Power Semiconductor | |
| Maximum Continuous Collector Current Ic | 75A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 428W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC J-STD-020 and JESD-022, RoHS | |
| Series | TrenchStop | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type Power Semiconductor | ||
Maximum Continuous Collector Current Ic 75A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 428W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC J-STD-020 and JESD-022, RoHS | ||
Series TrenchStop | ||
Automotive Standard No | ||
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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