Infineon, Type N-Channel IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole
- RS 제품 번호:
- 273-2980
- 제조사 부품 번호:
- IKW50N120CH7XKSA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩11,134.50
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 |
|---|---|
| 1 - 4 | ₩11,134.50 |
| 5 - 9 | ₩10,920.00 |
| 10 - 24 | ₩10,120.50 |
| 25 - 49 | ₩9,282.00 |
| 50 + | ₩8,580.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 273-2980
- 제조사 부품 번호:
- IKW50N120CH7XKSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Maximum Continuous Collector Current Ic | 50A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 398W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.15V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Series | TRENCHSTOPTM IGBT7 | |
| Height | 5.21mm | |
| Standards/Approvals | RoHS, JEDEC47/20/22 | |
| Length | 21.1mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Maximum Continuous Collector Current Ic 50A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 398W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.15V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Series TRENCHSTOPTM IGBT7 | ||
Height 5.21mm | ||
Standards/Approvals RoHS, JEDEC47/20/22 | ||
Length 21.1mm | ||
Automotive Standard No | ||
The Infineon IGBT7 H7 discrete in TO-247 3pin package technology has been developed to fulfill the demand in applications focusing on decarbonisation such as solar photovoltaic, uninterruptible power supplies and battery chargers.
Optimized performance in application conditions
Humidity robustness under harsh environment
Improved EMI performance
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