Infineon IKW50N120CH7XKSA1, Type N-Channel IGBT, 86 A 1200 V, 3-Pin TO-247, Through Hole
- RS 제품 번호:
- 273-2980
- 제조사 부품 번호:
- IKW50N120CH7XKSA1
- 제조업체:
- Infineon
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View bulk pricing optionsSubtotal (1 unit)*
₩11,200.00
재고있음
- 추가로 2026년 11월 02일 부터 91 개 단위 배송
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수량 | 한팩당 |
|---|---|
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* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 273-2980
- 제조사 부품 번호:
- IKW50N120CH7XKSA1
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Maximum Continuous Collector Current Ic | 86A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 398W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Series | IKW | |
| Width | 16.13mm | |
| Standards/Approvals | RoHS, JEDEC47/20/22 | |
| Height | 5.21mm | |
| Length | 21.1mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Maximum Continuous Collector Current Ic 86A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 398W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Series IKW | ||
Width 16.13mm | ||
Standards/Approvals RoHS, JEDEC47/20/22 | ||
Height 5.21mm | ||
Length 21.1mm | ||
Automotive Standard No | ||
Infineon IKW Series IGBT, 1200V Gate-Emitter Voltage, 86A Continuous Collector Current - IKW50N120CH7XKSA1
This IGBT is a power semiconductor device intended for high-current switching in power electronic systems. It combines a high gate-emitter voltage rating with substantial continuous collector current handling to support demanding switching tasks. The component is supplied in a through-hole TO-247 package and is designed to operate across a wide ambient temperature range for industrial environments.
Features and Benefits:
• 1200V gate-emitter voltage enables high-voltage switching capability
• 86A continuous collector current supports heavy-load operation
• 2V collector-emitter saturation voltage reduces conduction losses
• 398W power dissipation allows sustained thermal throughput
• Operates from -40°C to 175°C for broad temperature resilience
• 86A continuous collector current supports heavy-load operation
• 2V collector-emitter saturation voltage reduces conduction losses
• 398W power dissipation allows sustained thermal throughput
• Operates from -40°C to 175°C for broad temperature resilience
Applications
• Suitable for industrial motor drive inverter stages
• Used for high-current power transistor roles in converters
• Ideal for power electronics modules requiring through-hole mounting
• Can be used in high-temperature switching environments
• Used with designs needing a 3-pin power semiconductor
• Used for high-current power transistor roles in converters
• Ideal for power electronics modules requiring through-hole mounting
• Can be used in high-temperature switching environments
• Used with designs needing a 3-pin power semiconductor
What package and mounting style does it use?
It is supplied in a TO-247 package and intended for through-hole mounting.
What approvals relate to material and manufacturing standards?
It meets RoHS requirements and follows JEDEC47/20/22 standards.
What physical connector count should board designers expect?
The device presents three electrical pins for connection.
What are the device external dimensions for mechanical planning?
The package measures 21.1mm in length, 16.13mm in width and 5.21mm in height.
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