Infineon IKW40N120CH7XKSA1, Type N-Channel IGBT, 82 A 1200 V, 3-Pin TO-247, Through Hole
- RS 제품 번호:
- 273-2977
- 제조사 부품 번호:
- IKW40N120CH7XKSA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 tube of 30 units)*
₩182,280.00
일시적 품절
- 2027년 2월 25일 부터 240 개 단위 배송
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수량 | 한팩당 | Per Tube* |
|---|---|---|
| 30 - 30 | ₩6,076.00 | ₩182,280.00 |
| 60 + | ₩5,610.00 | ₩168,282.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 273-2977
- 제조사 부품 번호:
- IKW40N120CH7XKSA1
- 제조업체:
- Infineon
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 82A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 333W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 20.8mm | |
| Height | 5.21mm | |
| Standards/Approvals | RoHS, JEDEC47/20/22 | |
| Width | 16.13mm | |
| Series | IKW | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 82A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 333W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Length 20.8mm | ||
Height 5.21mm | ||
Standards/Approvals RoHS, JEDEC47/20/22 | ||
Width 16.13mm | ||
Series IKW | ||
Automotive Standard No | ||
The Infineon IGBT7 H7 discrete in TO-247 3pin package technology has been developed to fulfill the demand in applications focusing on decarbonisation such as solar photovoltaic, uninterruptible power supplies and battery chargers.
Optimized performance in application conditions
Humidity robustness under harsh environment
Improved EMI performance
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